Electron Device Letters - IEEE - News Items
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PCMO Device With High Switching Stability
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
We studied the relationship between the resistive-switching properties of the $hbox{Pr}_{0.7}hbox{Ca}_{0.3}hbox{MnO}_{3}$ (PCMO) thin-film elements and their geometry dimensions below ... (Read More)
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Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
Phase-change memory alloys based on germanium, antimony, and tellurium with $hbox{SiO}_{2}$ nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys ... (Read More)
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Phase-Change Memory Devices Operative at 100
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
Phase-change memory (PCM), although promising operative at room temperature, is struggling to achieve ten-year data retention over 100 $^{circ}hbox{C}$. We disclose here that a PCM device made of ... (Read More)
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High-Performance Metal–Insulator–Metal Capacitors With Stacked Dielectric
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
The $hbox{HfTiO}/hbox{Y}_{2}hbox{O}_{3}$ stacked dielectric is proposed as the dielectric of metal–insulator–metal (MIM) capacitor. $hbox{Y}_{2}hbox{O}_{3}$ is more thermodynamically ... (Read More)
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Compressive Uniaxial Stress Bandstructure Engineering for Transferred-Hole Devices
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
The transport properties of holes in Si, Ge, and $hbox{Si}_{1 - x} hbox{Ge}_{x}$ under high compressive stresses are studied with a Monte Carlo simulation method. Stress significantly improves the ... (Read More)
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Single and Multiple Oxygen Vacancies in Ultrathin Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
A first-principles method has been applied to the investigation of oxygen vacancies in ultrathin $hbox{SiO}_{2}$ gate dielectric and their influence on the gate leakage current. From the energy ... (Read More)
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Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
Accurate modeling of thermal noise in MOSFETs is crucial for RF application of deep-submicrometer CMOS technologies. Here, we present RF noise measurements on four commercial advanced CMOS ... (Read More)
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Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
The drain bias stress effect on organic thin-film transistor (OTFT) performance degradation in the atmosphere has been investigated. The OTFTs under drain bias stress exhibit larger performance ... (Read More)
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Four-Terminal-Relay Body-Biasing Schemes for Complementary Logic Circuits
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
Four-terminal-relay inverter circuit characteristics are investigated. To achieve maximum noise margin and zero crowbar current while allowing for relay-to-relay variations, the optimal biasing ... (Read More)
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IEEE Electron Devices Society Meetings Calendar for 2010 (As of 22 June 2010)
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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IEEE Electron Device Letters information for authors
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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2010 IEEE International Electron Devices Meeting (IEDM)
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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Nanotech Malaysia 2010: International Conference on Enabling Science and Nanotechnology
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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Table of Contents
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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Blank page
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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Table of Contents
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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IEEE Electron Device Letters publication information
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE |
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Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
In this letter, we report for the first time the degradation mechanism of drain current in tunneling field-effect transistors (TFETs). Using positive-bias and hot-carrier (HC) stress experiments ... (Read More)
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Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
Friday, July 30, 2010 - 04:21 AM - 20 hours, 54 minutes ago - Electrical Engineering - Electron Device Letters - IEEE
The hole mobility characteristics of $langle hbox{110}rangle$ /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive ... (Read More)
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