AIP Dielectrics and Ferroelectricity - News Items
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Bulk acoustic wave delay line in acoustic superlattice
Friday, September 03, 2010 - 04:18 AM - 2 days, 4 hours ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Ruo-Cheng Yin, Si-Yuan Yu, Cheng He, Ming-Hui Lu, and Yan-Feng Chen The bulk acoustic wave delay lines are demonstrated both theoretically and experimentally based on the acoustic superlattices. ... (Read More)
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Effects of O and HO oxidants on C and N-related impurities in atomic-layer-deposited LaO films observed by in situ x-ray photoelectron spectroscopy
Thursday, September 02, 2010 - 04:18 AM - 3 days, 4 hours ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Tae Joo Park, Prasanna Sivasubramani, Brian E. Coss, Hyun-Chul Kim, Bongki Lee et al. The effect of HO and O oxidants on the behavior of residual C and N-related impurities as well as Si ... (Read More)
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Electron trapping in substoichiometric germanium oxide
Thursday, September 02, 2010 - 04:18 AM - 3 days, 4 hours ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Jan Felix Binder, Peter Broqvist, and Alfredo Pasquarello Model structures of substoichiometric germanium oxide generated by ab initio molecular dynamics reveal a rich variety of bonding ... (Read More)
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Symmetry-mode analysis of the ferroelectric transition in YMnO
Wednesday, September 01, 2010 - 04:19 AM - 4 days, 4 hours ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Jinyoung Kim, Yang Mo Koo, Kee-Sun Sohn, and Namsoo Shin Group theoretical methods were applied to elucidate the structural transition path and the polarization process in YMnO. The atomic ... (Read More)
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Actual information storage with a recording density of 4 Tbit/in. in a ferroelectric recording medium
Tuesday, August 31, 2010 - 04:19 AM - 5 days, 4 hours ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Kenkou Tanaka and Yasuo Cho A new method to achieve real information recording with a density above 1 Tbit/in. in ferroelectric data storage systems is proposed. In this system, data bits were ... (Read More)
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Large pyroelectric effect in Fe-doped lithium niobate induced by a high-power short-pulse laser
Saturday, August 28, 2010 - 04:19 AM - 1 week, 1 day ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Kenji Kitamura, Hideki Hatano, Shunji Takekawa, Daniel Schutze, and Masakazu Aono We demonstrate the pyroelectric effect induced by a short pulse laser with an intensity up to 6 MW/cm which is ... (Read More)
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Oxygen migration at Pt/HfO/Pt interface under bias operation
Friday, August 27, 2010 - 04:19 AM - 1 week, 2 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita et al. The interfacial electronic states of a Pt/HfO/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under ... (Read More)
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The effect of graphite surface condition on the composition of AlO by atomic layer deposition
Wednesday, August 25, 2010 - 04:19 AM - 1 week, 4 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo et al. We present a study of the nucleation of atomic layer deposition of AlO on highly oriented pyrolytic graphite (HOPG) using ... (Read More)
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Polarization from dielectric-barrier discharges in ferroelectrets: Mapping of the electric-field profiles by means of thermal-pulse tomography
Saturday, August 21, 2010 - 04:19 AM - 2 weeks, 1 day ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Xunlin Qiu, Lars Hollander, Rosaura Flores Suarez, Werner Wirges, and Reimund Gerhard A polymer-ferroelectret system is fabricated by attaching two uniform polycarbonate films to a grid produced ... (Read More)
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Dissimilarity of polar displacements in barium and lead based relaxors
Friday, August 20, 2010 - 04:19 AM - 2 weeks, 2 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
D. Phelan, J. N. Millican, and P. M. Gehring Powder neutron diffraction experiments were performed on the relaxor compound, Ba(ZnNb)TiO, which was recently shown to have stronger frequency ... (Read More)
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Electromechanical response of porous piezoelectric materials: Effects of porosity connectivity
Friday, August 20, 2010 - 04:19 AM - 2 weeks, 2 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Sumantu Iyer and T. A. Venkatesh A three-dimensional finite element model is developed to completely characterize the electromechanical response of a general piezoelectric material with spherical ... (Read More)
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Enhanced ferroelectric properties in Mn-doped KNaNbO thin films derived from chemical solution deposition
Tuesday, August 17, 2010 - 04:19 AM - 2 weeks, 5 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Lingyan Wang, Wei Ren, Peng Shi, Xiaofeng Chen, Xiaoqing Wu et al. Mn-doped KNaNbO (KNN) thin films derived from chemical solution deposition have been investigated. 2 mol % manganese acetate was ... (Read More)
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Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics
Tuesday, August 17, 2010 - 04:19 AM - 2 weeks, 5 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
H. Ren, H. Sinha, A. Sehgal, M. T. Nichols, G. A. Antonelli et al. The surface potential due to charge accumulation during vacuum ultraviolet irradiation of high-k and low-k thin dielectric films ... (Read More)
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Dielectric response of polycrystalline SrBiTiO thin films under direct current bias
Saturday, August 14, 2010 - 04:19 AM - 3 weeks, 1 day ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Olena Okhay, Aiying Wu, Paula M. Vilarinho, and Alexander Tkach The effect of dc electric field E on the dielectric behavior of sol-gel derived SrBiTiO films on Si/SiO/TiO/Pt substrates is ... (Read More)
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An integrated, self-priming dielectric elastomer generator
Thursday, August 12, 2010 - 04:19 AM - 3 weeks, 3 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Thomas McKay, Benjamin O'Brien, Emilio Calius, and Iain Anderson Dielectric elastomer generators are a form of variable capacitor electricity generator with a high energy density and high ... (Read More)
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Polarization switching in quasiplanar BiFeO capacitors
Thursday, August 12, 2010 - 04:19 AM - 3 weeks, 3 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Lu You, Elvin Liang, Rui Guo, Di Wu, Kui Yao et al. Polarization switching in multiferroic BiFeO is studied using a quasiplanar capacitor geometry. Macroscopic quantitative hysteresis ... (Read More)
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Scanning probe based observation of bipolar resistive switching NiO films
Thursday, August 12, 2010 - 04:19 AM - 3 weeks, 3 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok et al. The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe ... (Read More)
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Field enhanced bulk conductivity of acceptor-doped BaTiCaO ceramics
Wednesday, August 11, 2010 - 04:19 AM - 3 weeks, 4 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Nahum Maso, Marta Prades, Hector Beltran, Eloisa Cordoncillo, Derek C. Sinclair et al. The electrical properties of Ca-doped BaTiO are very different when Ca substitutes onto Ba or Ti sites. The ... (Read More)
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HfOGaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer
Wednesday, August 11, 2010 - 04:19 AM - 3 weeks, 4 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
G. He, L. D. Zhang, M. Liu, and Z. Q. Sun In this letter, treatment of GaAs surface by using dimethylaluminumhydride-derived AlON passivation layer prior to HfO deposition is proposed to solve ... (Read More)
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Quantification of trap densities at dielectric/IIIV semiconductor interfaces
Wednesday, August 11, 2010 - 04:19 AM - 3 weeks, 4 days ago - Semiconductor - MEMS - AIP Dielectrics and Ferroelectricity
Roman Engel-Herbert, Yoontae Hwang, and Susanne Stemmer High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and IIIV semiconductor channels are modeled. The ... (Read More)
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