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Correlating structural and resistive changes in Ti:NiO resistive memory elements
Wednesday, March 10, 2010 - 04:19 AM - 4 months, 3 weeks ago - Physics - Applied Physics Letters from AIP
O. Heinonen, M. Siegert, A. Roelofs, A. K. Petford-Long, M. Holt et al. Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of t ... [Appl. Phys. Lett. 96, 103103 (2010)] published Mon Mar 8, 2010.


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