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Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation
Wednesday, March 10, 2010 - 04:19 AM - 4 months, 3 weeks ago - Physics - Applied Physics Letters from AIP
Nicolas Cavassilas, Nicolas Pons, Fabienne Michelini, and Marc Bescond We present a ballistic real-space six-band k.p transport model to study the influence of the channel orientation in double-gate p-type metal-oxide-semiconductor (pMOS) transistors. The six-band k.p Hamiltonian is integrated into a self-consistent two-dimensional ballistic transport simulator based o ... [Appl. Phys. Lett. 96, 102102 (2010)] published Mon Mar 8, 2010.


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